On the address decoder shown in Figure 3, it is then necessary to perform following sequence of Write (memory location with low resistive bridge b/w C and B at A7): Write C (10110 111) with value 1.

Designed 64-bit SRAM Memory using NCSU freepdk_45nm technology which includes 6T SRAM cell array, data register, NAND gate-based CMOS memory address decoder, read/write circuitry, sense amplifier and ...

Address decoders are typically built using regular logic gates. A novel Memristive Perfect Induction gate replaces standard NAND, allowing for storing the address alongside data and comparing it to ...

To minimize decoding latency, this paper proposes a decoding mechanism based on the double hard decision, called DHD. This DHD scheme improves the Log-Likelihood Ratio (LLR) in the hard decision ...

Address decoding logic using either a 74LS00 quad NAND gate as in Ben Eater's original design, or a ATF22V10C-7PX programmable logic device (PLD). 5V and 3.3V power supplies based on a 9-12V DC input.

The complete layout of the decoder was designed based on its schematic circuit, which consists of NOT gates, 2-input NAND gates, 3-input NAND gates, 4-input NAND gates, 2-input AND gates and 3 ...