It plays a vital role in electric vehicle (EV) infrastructure, contributing to the efficient charging and power management systems required to support the growing EV ecosystem. Littelfuse, Inc. has ...

In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900 V power MOSFET gate ESD protection. The suggested device was designed and ...

Generally all the devices come with Reverse Polarity Protection Circuit but if ... The circuit consists of a P-Channel MOSFET, Zener diode and a pull-down resistor. If the supply voltage is less than ...

Multiple Zeners/TVS diodes have been used for the asymmetric gate protection needed for SiC MOSFETs. The new TPSMBxx05 series of TVS diodes can replace these with a single-component solution. A basic ...

SiC MOSFETs typically have a particularly lower negative than positive gate voltage. Therefore, asymmetric protection with two separate TVS diodes was previously needed, which took up more space in ...

Using a MOSFET as a switch is generally ... Using an optoisolator, using a gate bleeder resistor, and using a zener diode to limit gate voltage. Of course, an optoisolator isn’t necessary ...

As an alternative to a Schottky diode, you can use a p-channel MOSFET ... gate times in dual back-to-back connected n-FET configurations (which offer inrush-current limiting and overvoltage ...

The TVS diode series offers single-component protection for SiC MOSFET gate drivers, simplifying designs and improving overvoltage protection in EV systems. TPSMB Asymmetrical TVS Diodes from ...