Abstract: Gallium nitride high electron mobility transistor (GaN-HEMT) is attractive for fast switching capability and small on-resistance, which motivates researchers to adopt GaN-HEMT for high-power ...

The two diagrams above are of the same circuit for a simple night light. How it works: when darkness falls on the light dependant resistor (LDR), its resistance increases causing a higher voltage ...

The body control module ... advanced low-power mode control and smart fail-safe behavior. Pin compatible family devices with different transceiver options support scalable platforms by simply changing ...