Abstract: Process variations ... new on-chip memory architectures based on novel 3T1D DRAM (3-transistor, 1-diode dynamic memory) cells. We provide a detailed comparison between 6T and 3T1D designs in ...

--(BUSINESS WIRE)--Everspin Technologies today announced that Buffalo Memory is ... Everspin ST-MRAM cache improves: Tolerance for sudden power off Access time (saving some process steps which ...

Processing-in Memory) has been proposed. However, SRAM/DRAM based PIM have a issue for lack of capacity. Thus, we propose a NAND flash PIM scheme that shares the cache register. Our scheme ...