Future CMOS technology nodes bring new challenges to formation of source/drain junctions and their contacts to limit their series resistance contribution to ten percent of the device channel ...

We present the technology "Quantum Leap" encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very ...

Learn about common sources of power leakage in CMOS logic gates and how to minimize them using various techniques at different levels of design.

To achieve faster transistor speeds and lower power dissipation, device fabrication will require innovative solutions to minimise leakage resulting from process damage and electrostatic control. Ultra ...

Dainippon Screen Manufacturing has entered into a partnership to accelerate development and commercialisation of advanced semiconductor doping technology with Sematech, a global consortium of the ...