A 3.3-V CMOS technology with 0.6- mu m design rules in sixth-generation twin-tub CMOS (twin-tub VI) was developed. The major features of the device in this technology are: HIPOX twin-tub structure, ...

This letter examines vertical punchthrough in a shallow conventional n-well suitable for use in high-packing-density VLSI CMOS circuits. It is shown that full vertical isolation can be maintained even ...

You can reduce junction leakage by using shallow junctions, halo implants, or silicon-on-insulator (SOI) substrates. Add your perspective Help others by sharing more (125 characters min.) Cancel ...

Unison to advance steep ultra-shallow junction technology Thursday 22nd December 2011 Dainippon Screen Manufacturing has entered into a partnership to accelerate development and commercialisation of ...

Unison to advance steep ultra-shallow junction technology. Monday 19th December 2011. The Dainippon Screen and Sematech partnership combines individual strengths to develop sub 14 nm semiconductor ...