This minuscule, surface-mount GDT has a relatively lower-voltage sparkover threshold in an EIA 1206-size package to provide ...
A new technical paper titled “Optimizing Energy Efficiency in Subthreshold RISC-V Cores” was published by researchers at Norwegian University of Science and Technology (NTNU). Abstract “Our goal in ...
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage ...
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