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IEEE13d
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices - IEEE Xplore
This paper investigates the feasibility of sub-0.2 V high-speed low-power circuits with hetero-channel MOSFET and emerging Tunneling FET (TFET) devices. First, the device designs and characteristics ...
IEEE19d
Design of high performance sense amplifier using independent gate control in sub-50nm double-gate MOSFET
The double-gate (DG) transistor has emerged as the most promising device for nanoscale circuit design. Independent control of front and back gate in DG devices can be effectively used to improve ...
elektormagazine24d
Pure Sine Wave Inverter | Elektor Magazine
23.4 kHz PWM carrier frequency. dead time control(300ns, 500ns, 1.0us and 1.5us). Soft start mode. ... Includes two MOSFET drivers(IR2110S or IR2113S) for driving two MOSFET half bridges. 3mm RED LED ...
C&EN25d
Lead-Free Copper Halide LEDs: Leapfrogging in Performance with Device Engineering Employing Coevaporation of Precursors with Nanoscale Process Control
Lead-free copper halide light-emitting diodes (LEDs) have emerged as a promising alternative to perovskite LEDs, particularly in the context of environmental challenges. This study investigates the ...