Abstract: We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image ...

Abstract: A 2.4-GHz fully-differential RF front-end on 0.18-/spl mu/m CMOS technology for wireless sensor network (WSN) applications consuming 4.8-mW from a 1.8-V supply is presented. The direct ...

13.6 21.4 59.3 (24.3) - CH / 1000 m / tf / 4 bt 7 / T C Guta / Slow canter site (R.B.) (CH) ...

00.00 22.30 1.01.1 (22.8) - ST / 1050 m / aw / 6 bt 9 / K Teetan / Swimming ...