Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to ...

STMicroelectronics’ STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible ...

The research revealed that power systems with higher WD-RES penetration did not exhibit more blackout vulnerability and when blackouts did occur they were likely to have reduced intensity (as ...

The Crescendo platform – a scalable on-demand vertical power architecture for upwards of 3,000A power domains – integrates all power components in a single device thin enough to relocate underneath ...

Vishay Intertechnology has expanded its Gen 7 platform of 1200 V FRED Pt Hyperfast rectifiers with four new Automotive Grade devices in the eSMP series SMF (DO-219AB) package.

Navitas Semiconductor, a developer of GaN power ICs and SiC technology, has announced unaudited financial results for the ...

UK-based Cambridge GaN Devices (CGD), formed in 2016, will exhibit at Electronica (November 12-15, Munich, Germany) for the second time in the company's history.

Navitas Semiconductor has announced what it claims is the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98 percent efficiency, for next-generation AI and ...

Allegro MicroSystems has announced a series of new power products designed to improve performance and efficiency across automotive, industrial and data centre applications.

Toshiba Electronics Europe will be showing its semiconductor, battery, data storage, and ceramic substrate products at electronica 2024 in Munich, Germany, from November 12th to 15th 2024.

Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices”, said Katrin ...