Mar 1, 2025 · In this paper, a thorough characterization of phase-change memory (PCM) cells was carried out, aimed at evaluating and optimizing their performance as enabling devices for analog in-memory computing (AIMC) applications.

Phase-change memory (PCM) is a promising technology for both storage class memory and emerging non-von Neumann computing systems. For both applications, a key enabling technology is the ability to store multiple resistance levels in a single device.

PCM cell characteristics: (a) schematic of the memory array and cell, (b) I-V characteristic showing threshold switching and snap-back, (c) programming curve starting from either the RESET or the...

Mar 26, 2021 · In this paper, a thorough characterization of phase-change memory (PCM) cells was carried out, aimed at evaluating and optimizing their performance as enabling devices for analog in-memory computing (AIMC) applications.

Jul 8, 2019 · The characteristic programming curve of the phase change memory (PCM) cell resistance as a function of pulse amplitude for (a) RESET initialization and (b) SET initialization; resistance distribution for (c) RESET initialization and (d) SET initialization.

Jun 18, 2011 · This article proposes a hybrid programming algorithm for MLC PCM devices that employs one-shot preprogram and graded iterations to speed up the convergence of intermediate conductance while...

A systems-based model that captures the essential behavior of the PCM cell, which captures the interplay between the electrical, thermal and phase-change parts of the system and is a powerful tool for the design of efficient iterative multilevel programming algorithms.

Aug 2, 2011 · In this paper, we present a family of advanced programming schemes for multilevel storage in PCM. The proposed schemes are based on iterative write-and-verify algorithms that exploit the unique programming characteristics of PCM in order to achieve significant improvements in resistance-level packing density, robustness to cell variability ...

Sep 18, 2018 · Mapping of the matrix elements to the conductance values of the resistive memory device can be achieved via iterative programming using the programming curve. 5 Figure 5(b) shows an experimental demonstration of a matrix-vector multiplication using real PCM devices fabricated in the 90 nm technology node.

Mar 26, 2021 · In this paper, a thorough characterization of phase-change memory (PCM) cells was carried out, aimed at evaluating and optimizing their performance as enabling devices for analog in-memory...